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| ACTS541T Data Sheet July 1999 File Number 4612.1 Radiation Hardened Octal Three-State Buffer/Line Driver Intersil's Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil ACTS541T is a Radiation Hardened Octal Buffer/Line Driver, with three-state outputs. The output enable pins OE1, OE2 control the three-state outputs. If either enable is high the output will be in a high impedance state. For data output both enables must be low. Features * QML Class T, Per MIL-PRF-38535 * Radiation Performance - Gamma Dose () 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) - SEU LET Threshold . . . . . . . . . . . . .>100 MEV-cm2/mg * 1.25 Micron Radiation Hardened SOS CMOS * Significant Power Reduction Compared to ALSTTL Logic * DC Operating Voltage Range . . . . . . . . . . . . 4.5V to 5.5V * Input Logic Levels - VIL = 0.8V Max - VIH = VCC/2 Min * Fast Propagation Delay . . . . . . . . 21ns (Max), 14ns (Typ) Specifications Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACTS541T are contained in SMD 5962-96726. A "hot-link" is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil's Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.semi.intersil.com/quality/manuals.asp Pinouts ACTS541T (SBDIP), CDIP2-T20 TOP VIEW OE1 A0 A1 A2 A3 1 2 3 4 5 6 7 8 9 20 VCC 19 OE2 18 Y0 17 Y1 16 Y2 15 Y3 14 Y4 13 Y5 12 Y6 11 Y7 Ordering Information ORDERING NUMBER 5962R9672602TRC 5962R9672602TXC PART NUMBER ACTS541DTR-02 ACTS541KTR-02 TEMP. RANGE (oC) -55 to 125 -55 to 125 A4 A5 A6 A7 GND 10 NOTE: Minimum order quantity for -T is 150 units through ACTS541T (FLATPACK), CDFP4-F20 TOP VIEW OE1 A0 A1 A2 A3 A4 A5 A6 A7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC OE2 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 distribution, or 450 units direct. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 ACTS541T Functional Diagram 2 A0 OE1 OE2 19 3 A1 1 GND VCC 17 Y1 GND VCC 16 Y2 GND VCC 15 Y3 GND VCC 14 Y4 GND VCC 13 Y5 GND VCC 12 Y6 GND VCC 11 Y7 GND VCC 18 Y0 4 A2 5 A3 6 A4 7 A5 8 A6 9 GND VCC 10 20 A7 TRUTH TABLE INPUTS OE1 L L H X OE2 L L X H An H L X X OUTPUTS Yn H L Z Z NOTE: L = Low Logic Level, H = High Logic Level, Z = High Impedance. 2 ACTS541T Die Characteristics DIE DIMENSIONS: (2600m x 2600m x 533m 51m) 102 x 102 x 21mils 2mil METALLIZATION: Type: Al Si Cu Thickness: 10.0kA 2kA SUBSTRATE POTENTIAL: Unbiased (Silicon on Sapphire) Bond Pad #20 (VCC) First BACKSIDE FINISH: Sapphire PASSIVATION: Type: Silox (SiO2) Thickness: 8.0kA 1.0kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 182 PROCESS: CMOS SOS Metallization Mask Layout ACTS541T (19) OE2 (20) VCC (1) OE1 (18) YO (3) A1 (2) A0 A2 (4) (17) Y1 A3 (5) (16) Y2 NC NC NC NC A4 (6) (15) Y3 A5 (7) (14) Y4 Y7 (11) Y6 (12) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 3 GND (10) Y5 (13) A6 (8) A7 (9) |
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